Direct growth of CuO/ITO nanowires by the vapor solid oxidation method

• Published in: Journal of materials science. Materials in electronics Vol. 27; no. 5; pp. 4410 - 4416
• Main Authors: Nguyen, Tien Dai, Dang, Tran Chien, Ta, Anh Tan, Dao, Khac An
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.05.2016; Springer Nature B.V
• Subjects: Annealing; ANNEALING PROCESSES; ANNEALING TEMPERATURE; Characterization and Evaluation of Materials; Chemistry and Materials Science; COPPER OXIDE; CUPRIC OXIDE; Direct current; Indium tin oxide; Magnetron sputtering; Materials Science; MICROWIRE; Nanowires; Optical and Electronic Materials; Oxidation; OXIDES; SPUTTERING; Substrates; THIN FILMS; Cupric Oxide; Vapor Solid Mechanism; Cu2O Phase; Scanning Electron Microsope; Cu2O

In this paper, we report the synthesis results of cupric oxide nanowires (NWs) on the indium tin oxide (ITO) substrate by vapor solid oxidation method. In our study, a Cu layer of thickness 1.4 µm was deposited on ITO thin film substrates through the direct current DC magnetron sputtering method. Cu...