Direct growth of CuO/ITO nanowires by the vapor solid oxidation method

• Published in: Journal of materials science. Materials in electronics Vol. 27; no. 5; pp. 4410 - 4416
• Main Authors: Nguyen, Tien Dai, Dang, Tran Chien, Ta, Anh Tan, Dao, Khac An
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.05.2016; Springer Nature B.V
• Subjects: Annealing; ANNEALING PROCESSES; ANNEALING TEMPERATURE; Characterization and Evaluation of Materials; Chemistry and Materials Science; COPPER OXIDE; CUPRIC OXIDE; Direct current; Indium tin oxide; Magnetron sputtering; Materials Science; MICROWIRE; Nanowires; Optical and Electronic Materials; Oxidation; OXIDES; SPUTTERING; Substrates; THIN FILMS; Cupric Oxide; Vapor Solid Mechanism; Cu2O Phase; Scanning Electron Microsope; Cu2O
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-016-4311-1

In this paper, we report the synthesis results of cupric oxide nanowires (NWs) on the indium tin oxide (ITO) substrate by vapor solid oxidation method. In our study, a Cu layer of thickness 1.4 µm was deposited on ITO thin film substrates through the direct current DC magnetron sputtering method. Cupric oxide NWs grew on ITO after annealing Cu/ITO substrates at the temperatures with range from 350 to 500 °C in air for 3–5 h. The received peak shift of Cu 2 O to CuO NW phase depending on annealing temperatures was conducted by X-ray diffraction. Chemical atomic elements were obtained from energy dispersive X-ray spectroscopy. The morphology of nanowires were investigated using scanning electron microsope (SEM). The SEM images indicated that the NWs with length about 3–3.5 µm and diameter about 100 nm grew vertically over large area.