Direct growth of CuO/ITO nanowires by the vapor solid oxidation method
In this paper, we report the synthesis results of cupric oxide nanowires (NWs) on the indium tin oxide (ITO) substrate by vapor solid oxidation method. In our study, a Cu layer of thickness 1.4 µm was deposited on ITO thin film substrates through the direct current DC magnetron sputtering method. Cu...
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| Published in | Journal of materials science. Materials in electronics Vol. 27; no. 5; pp. 4410 - 4416 |
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| Main Authors | , , , |
| Format | Journal Article |
| Language | English |
| Published |
New York
Springer US
01.05.2016
Springer Nature B.V |
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| Abstract | In this paper, we report the synthesis results of cupric oxide nanowires (NWs) on the indium tin oxide (ITO) substrate by vapor solid oxidation method. In our study, a Cu layer of thickness 1.4 µm was deposited on ITO thin film substrates through the direct current DC magnetron sputtering method. Cupric oxide NWs grew on ITO after annealing Cu/ITO substrates at the temperatures with range from 350 to 500 °C in air for 3–5 h. The received peak shift of Cu
2
O to CuO NW phase depending on annealing temperatures was conducted by X-ray diffraction. Chemical atomic elements were obtained from energy dispersive X-ray spectroscopy. The morphology of nanowires were investigated using scanning electron microsope (SEM). The SEM images indicated that the NWs with length about 3–3.5 µm and diameter about 100 nm grew vertically over large area. |
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| AbstractList | In this paper, we report the synthesis results of cupric oxide nanowires (NWs) on the indium tin oxide (ITO) substrate by vapor solid oxidation method. In our study, a Cu layer of thickness 1.4 mu m was deposited on ITO thin film substrates through the direct current DC magnetron sputtering method. Cupric oxide NWs grew on ITO after annealing Cu/ITO substrates at the temperatures with range from 350 to 500 degree C in air for 3-5 h. The received peak shift of Cu sub(2)O to CuO NW phase depending on annealing temperatures was conducted by X-ray diffraction. Chemical atomic elements were obtained from energy dispersive X-ray spectroscopy. The morphology of nanowires were investigated using scanning electron microsope (SEM). The SEM images indicated that the NWs with length about 3-3.5 mu m and diameter about 100 nm grew vertically over large area. In this paper, we report the synthesis results of cupric oxide nanowires (NWs) on the indium tin oxide (ITO) substrate by vapor solid oxidation method. In our study, a Cu layer of thickness 1.4 µm was deposited on ITO thin film substrates through the direct current DC magnetron sputtering method. Cupric oxide NWs grew on ITO after annealing Cu/ITO substrates at the temperatures with range from 350 to 500 °C in air for 3–5 h. The received peak shift of Cu 2 O to CuO NW phase depending on annealing temperatures was conducted by X-ray diffraction. Chemical atomic elements were obtained from energy dispersive X-ray spectroscopy. The morphology of nanowires were investigated using scanning electron microsope (SEM). The SEM images indicated that the NWs with length about 3–3.5 µm and diameter about 100 nm grew vertically over large area. In this paper, we report the synthesis results of cupric oxide nanowires (NWs) on the indium tin oxide (ITO) substrate by vapor solid oxidation method. In our study, a Cu layer of thickness 1.4 µm was deposited on ITO thin film substrates through the direct current DC magnetron sputtering method. Cupric oxide NWs grew on ITO after annealing Cu/ITO substrates at the temperatures with range from 350 to 500 °C in air for 3-5 h. The received peak shift of Cu^sub 2^O to CuO NW phase depending on annealing temperatures was conducted by X-ray diffraction. Chemical atomic elements were obtained from energy dispersive X-ray spectroscopy. The morphology of nanowires were investigated using scanning electron microsope (SEM). The SEM images indicated that the NWs with length about 3-3.5 µm and diameter about 100 nm grew vertically over large area. |
| Author | Dao, Khac An Nguyen, Tien Dai Dang, Tran Chien Ta, Anh Tan |
| Author_xml | – sequence: 1 givenname: Tien Dai orcidid: 0000-0002-9420-210X surname: Nguyen fullname: Nguyen, Tien Dai email: daint@ims.vast.ac.vn organization: Institute of Materials Science (IMS), Vietnam Academy of Science and Technology (VAST) – sequence: 2 givenname: Tran Chien surname: Dang fullname: Dang, Tran Chien organization: Hanoi University of Natural Resources and Environment – sequence: 3 givenname: Anh Tan surname: Ta fullname: Ta, Anh Tan organization: Hanoi Metropolitan University – sequence: 4 givenname: Khac An surname: Dao fullname: Dao, Khac An organization: Institute of Materials Science (IMS), Vietnam Academy of Science and Technology (VAST) |
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| Keywords | Cupric Oxide Vapor Solid Mechanism Cu2O Phase Scanning Electron Microsope Cu2O |
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| Snippet | In this paper, we report the synthesis results of cupric oxide nanowires (NWs) on the indium tin oxide (ITO) substrate by vapor solid oxidation method. In our... |
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| SubjectTerms | Annealing ANNEALING PROCESSES ANNEALING TEMPERATURE Characterization and Evaluation of Materials Chemistry and Materials Science COPPER OXIDE CUPRIC OXIDE Direct current Indium tin oxide Magnetron sputtering Materials Science MICROWIRE Nanowires Optical and Electronic Materials Oxidation OXIDES SPUTTERING Substrates THIN FILMS |
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| Title | Direct growth of CuO/ITO nanowires by the vapor solid oxidation method |
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