An efficient numerical approach to studying impact ionization in sub-micrometer devices

A positive feedback model is introduced to facilitate numerical calculations of the impact-ionization current gain in sub-micrometer devices. Demonstrations of this model’s applicability are done through Monte Carlo simulations to fit the experimental data of short p-i-n diodes. It is shown from the...

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Bibliographic Details
Published inJournal of computational electronics Vol. 13; no. 1; pp. 329 - 337
Main Author Chau, Quan
Format Journal Article
LanguageEnglish
Published Boston Springer US 01.03.2014
Springer Nature B.V
Subjects
Computation
Computer simulation
Devices
Diodes
Electric fields
Electrical Engineering
Energy
Engineering
Gain
Ionization
Mathematical and Computational Engineering
Mathematical and Computational Physics
Mathematical models
Mechanical Engineering
Micrometers
Monte Carlo methods
Monte Carlo simulation
Optical and Electronic Materials
PIN diodes
Positive feedback
Simulation
Theoretical
Travel
Monte Carlo
Model
Impact ionization
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Summary:A positive feedback model is introduced to facilitate numerical calculations of the impact-ionization current gain in sub-micrometer devices. Demonstrations of this model’s applicability are done through Monte Carlo simulations to fit the experimental data of short p-i-n diodes. It is shown from the simulations’ results that the phonon-collision broadening effect and the intra-collisional field effect play an important role in the II process in deep sub-micrometer devices. It is also shown, for the first time, that the impact-ionization rates at very low energies can be extracted from the measured current gain in short p-i-n diodes.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1569-8025
1572-8137
DOI:10.1007/s10825-013-0536-x