Electronic transport in penta-graphene nanoribbon devices using carbon nanotube electrodes: A computational study
Electronic transport properties of pristine, homogenously and heterogeneously boron-nitrogen doped saw-tooth penta-graphene nanoribbon (SPGNR) with carbon nanotube electrodes have been studied using Extended Huckel Theory in combination with the non-equilibrium Green's function formalism. CNT e...
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Published in | Nanosystems : Physics, Chemistry, Mathematics Vol. 11; no. 2; pp. 176 - 182 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
St. Petersburg
St. Petersburg National Research University of Information Technologies, Mechanics and Optics
2020
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Subjects | |
Online Access | Get full text |
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Summary: | Electronic transport properties of pristine, homogenously and heterogeneously boron-nitrogen doped saw-tooth penta-graphene nanoribbon (SPGNR) with carbon nanotube electrodes have been studied using Extended Huckel Theory in combination with the non-equilibrium Green's function formalism. CNT electrodes produce a remarkable increase in current at higher bias voltages in pristine SPGNR. The current intensity is maximum at higher bias voltages, while the nitrogen-doped model shows current from the onset of the bias voltage. However, there are also considerable differences in the I-V curves associated with the pristine model and sother models doped homogenously as well as heterogeneously with boron and nitrogen. The doped models also exhibit a small negative differential resistance effect, with much prominence in the nitrogen-doped model. In summary, our findings show clearly that doping can effectively modulate the electronic and the transport properties of penta-graphene nanoribbons that have not been studied and reported thus far. |
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ISSN: | 2220-8054 2305-7971 |
DOI: | 10.17586/2220-8054-2020-11-2-176-182 |