Electronic transport in penta-graphene nanoribbon devices using carbon nanotube electrodes: A computational study

• Published in: Nanosystems : Physics, Chemistry, Mathematics Vol. 11; no. 2; pp. 176 - 182
• Main Authors: Parvaiz, M. Shunaid, Shah, Khurshed A., Dar, G.N., Chowdhury, Sugata, Farinre, Olasunbo, Misra, Prabhakar
• Format: Journal Article
• Language: English
• Published: St. Petersburg St. Petersburg National Research University of Information Technologies, Mechanics and Optics 2020
• Subjects: Bias; Boron; Carbon nanotubes; Electrodes; Electron transport; Graphene; Green's functions; Nanoribbons; Nitrogen; Transport properties
• ISSN: 2220-8054; 2305-7971
• DOI: 10.17586/2220-8054-2020-11-2-176-182

Electronic transport properties of pristine, homogenously and heterogeneously boron-nitrogen doped saw-tooth penta-graphene nanoribbon (SPGNR) with carbon nanotube electrodes have been studied using Extended Huckel Theory in combination with the non-equilibrium Green's function formalism. CNT electrodes produce a remarkable increase in current at higher bias voltages in pristine SPGNR. The current intensity is maximum at higher bias voltages, while the nitrogen-doped model shows current from the onset of the bias voltage. However, there are also considerable differences in the I-V curves associated with the pristine model and sother models doped homogenously as well as heterogeneously with boron and nitrogen. The doped models also exhibit a small negative differential resistance effect, with much prominence in the nitrogen-doped model. In summary, our findings show clearly that doping can effectively modulate the electronic and the transport properties of penta-graphene nanoribbons that have not been studied and reported thus far.