Ultrafast high-field transport in GaAs: direct observation of quasi-ballistic electron motion, impact ionization and avalanche multiplication

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Bibliographic Details
Published inSemiconductor science and technology Vol. 19; no. 4; pp. S167 - S169
Main Authors Betz, M, Trumm, S, Sotier, F, Leitenstorfer, A, Schwanhäußer, A, Eckardt, M, Schmidt, O, Malzer, S, Döhler, G H, Hanson, M, Driscoll, D, Gossard, A C
Format Journal Article Conference Proceeding
LanguageEnglish
Published Bristol IOP Publishing 01.04.2004
Institute of Physics
Subjects
Applied sciences
Electronics
Exact sciences and technology
Physics
Gallium arsenides
Inorganic compounds
Semiconductor materials
Transit time
Franz-Keldysh effect
Binary compounds
Ballistic transport
Avalanche
Electric field effects
High field
Impact ionization
Transport processes
Absorption spectra
Heterostructures
Charge carrier injection
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/19/4/058