Effect of Post-Implantation Heat Treatment Conditions on Photoluminescent Properties of Ion-Synthesized Gallium Oxide Nanocrystals

A novel and promising way for creating nanomaterials based on gallium oxide is the ion synthesis of Ga O nanocrystals in a SiO /Si dielectric matrix. The properties of nanocrystals are determined by the conditions of ion synthesis-the parameters of ion irradiation and post-implantation heat treatmen...

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Published inNanomaterials (Basel, Switzerland) Vol. 14; no. 10; p. 870
Main Authors Korolev, Dmitry S, Matyunina, Kristina S, Nikolskaya, Alena A, Belov, Alexey I, Mikhaylov, Alexey N, Sushkov, Artem A, Pavlov, Dmitry A, Tetelbaum, David I
Format Journal Article
LanguageEnglish
Published Switzerland MDPI AG 17.05.2024
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Summary:A novel and promising way for creating nanomaterials based on gallium oxide is the ion synthesis of Ga O nanocrystals in a SiO /Si dielectric matrix. The properties of nanocrystals are determined by the conditions of ion synthesis-the parameters of ion irradiation and post-implantation heat treatment. In this work, the light-emitting properties of Ga O nanocrystals were studied depending on the temperature and annealing atmosphere. It was found that annealing at a temperature of 900 °C leads to the appearance of intense luminescence with a maximum at ~480 nm caused by the recombination of donor-acceptor pairs. An increase in luminescence intensity upon annealing in an oxidizing atmosphere is shown. Based on data from photoluminescence excitation spectroscopy and high-resolution transmission electron microscopy, a hypothesis about the possibility of the participation of a quantum-size effect during radiative recombination is proposed. A mechanism for the formation of Ga O nanocrystals during ion synthesis is suggested, which makes it possible to describe the change in the luminescent properties of the synthesized samples with varying conditions of post-implantation heat treatment.
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ISSN:2079-4991
2079-4991
DOI:10.3390/nano14100870