Digital lithography for large-area electronics on flexible substrates

Hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) were fabricated at growth temperatures no greater than 150°C. The transistor device performance was comparable to conventional high-temperature processed devices. Typical field-effect mobility for these low-temperature devices were...

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Bibliographic Details
Published inJournal of non-crystalline solids Vol. 352; no. 9-20; pp. 1981 - 1985
Main Authors Wong, William S., Lujan, René, Daniel, Jürgen H., Limb, Scott
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 15.06.2006
Elsevier
Subjects
Applied sciences
Electronics
Exact sciences and technology
Miscellaneous
Processing
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Thin film transistors
Silicon
Thin film transistors
73.61.Jc
81.05.Gc
Processing
Material processing
Lithography
Flexibility
Thin film
Substrate
Engraving
Amorphous hydrogenated material
Thin film transistor
Performance
Photolithography
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Summary:Hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) were fabricated at growth temperatures no greater than 150°C. The transistor device performance was comparable to conventional high-temperature processed devices. Typical field-effect mobility for these low-temperature devices were ∼1cm2/Vs, on–off ratios of >108, and sub-threshold slopes of 0.5V/decade were measured. The low-temperature process allowed the integration of the TFTs with flexible polymeric substrates. Device fabrication for these devices was performed using jet-printed etch masks in place of photolithography. The devices fabricated on the flexible substrates using jet printing were comparable to devices fabricated on glass.
ISSN:0022-3093
1873-4812
DOI:10.1016/j.jnoncrysol.2005.12.055