Onset of current oscillations in extrinsic semiconductors under DC voltage bias

We present a model which describes the onset of current instabilities and space-charge domains in extrinsic semiconductors (especially p-Ge) under DC voltage bias. Just above the onset voltage for current instability we have found numerically small-amplitude fast oscillations due to the periodic mot...

Full description

Saved in:
Bibliographic Details
Published inSemiconductor science and technology Vol. 9; no. 5S; pp. 599 - 602
Main Authors Bonilla, L L, Cantalapiedra, I R, Bergmann, M J, Teitsworth, S W
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.05.1994
Online AccessGet full text

Cover

More Information
Summary:We present a model which describes the onset of current instabilities and space-charge domains in extrinsic semiconductors (especially p-Ge) under DC voltage bias. Just above the onset voltage for current instability we have found numerically small-amplitude fast oscillations due to the periodic motion of solitary waves which decay before reaching the receiving contact. For slightly larger applied voltages there is an abrupt and slightly hysteretic transition to slower large-amplitude solitary waves similar to those in the Gunn effect. An amplitude oscillatory modes that become linearly unstable at onset.
Bibliography:SourceType-Scholarly Journals-2
ObjectType-Feature-2
ObjectType-Conference Paper-1
content type line 23
SourceType-Conference Papers & Proceedings-1
ObjectType-Article-3
ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/9/5S/054