Deterministic mechanisms of spiking in diffusive memristors

• Published in: Chaos, solitons and fractals Vol. 149; p. 110997
• Main Authors: Ushakov, Yury, Akther, Amir, Borisov, Pavel, Pattnaik, Debi, Savel’ev, Sergey, Balanov, Alexander G.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.08.2021
• Subjects: Deterministic dynamics; Diffusive memristor; Spiking; 99-00; Diffusive memristor; 00-01; Spiking; Deterministic dynamics
• ISSN: 0960-0779; 1873-2887
• DOI: 10.1016/j.chaos.2021.110997

•Modeling negative differential resistance of memristors.•Global bifurcations in a diffusive memristor model.•Distinguishing different spiking modes of a diffusive memristor.•Analyzing deterministic dynamics to understand effects of noise in a diffusive memristor. Diffusive memristors, which have been recently fabricated and measured, attract a significant interest being among the best candidates to mimic neuron activities and to implement novel computing paradigms. Such devices are capable of exhibiting a combination of dynamical, chaotic, and stochastic phenomena needed for efficient neuromorphic computational systems. However, understanding the contribution of deterministic and stochastic dynamics to the functional properties of a diffusive memristor is still an open problem. To study the deterministic mechanisms governing the dynamics of diffusive memristors, we analyze a model of a memristive circuit when the effects of the temperature noise are neglected. We reveal instabilities, which shape the current-voltage characteristic of the device and imply the onset of current self-oscillations. Finally, the results of modeling are compared with experimentally measured current-voltage characteristics.