Dielectric function of wurtzite GaN and AlN thin films

Measurements and calculations of the dielectric function of wurtzite GaN and AlN are presented. Spectroscopic ellipsometry was used to determine ϵ( ω) of thin film samples in the energy range from 3 to 9.8 eV. Calculations of ϵ( ω) for the bulk materials were performed within a first-principles elec...

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Published inSolid state communications Vol. 112; no. 3; pp. 129 - 133
Main Authors Benedict, L.X., Wethkamp, T., Wilmers, K., Cobet, C., Esser, N., Shirley, E.L., Richter, W., Cardona, M.
Format Journal Article
LanguageEnglish
Published Oxford Elsevier Ltd 01.09.1999
Elsevier
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Summary:Measurements and calculations of the dielectric function of wurtzite GaN and AlN are presented. Spectroscopic ellipsometry was used to determine ϵ( ω) of thin film samples in the energy range from 3 to 9.8 eV. Calculations of ϵ( ω) for the bulk materials were performed within a first-principles electronic structure scheme that includes the electron–hole interaction. The agreement between experiment and theory is dramatically improved over the previous work, a result of improvements in both experimental technique and theoretical description. The predicted polarization dependence of the dielectric function of these materials exhibits features similar to that in other wurtzite structure materials.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0038-1098
1879-2766
DOI:10.1016/S0038-1098(99)00323-3