Realization of conformal doping on multicrystalline silicon solar cells and black silicon solar cells by plasma immersion ion implantation

Emitted multi-crystalline silicon and black silicon solar cells are conformal doped by ion implantation using the plasma immersion ion implantation （PⅢ） technique. The non-uniformity of emitter doping is lower than 5 %. The secondary ion mass spectrometer profile indicates that the PⅢ technique obta...

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Published inChinese physics B Vol. 23; no. 11; pp. 661 - 665
Main Author 沈泽南 夏洋 刘邦武 刘金虎 李超波 李勇滔
Format Journal Article
LanguageEnglish
Published 01.11.2014
Subjects
Annealing
Emittance
Furnaces
Immersion
Ion implantation
Photovoltaic cells
Plasma (physics)
Silicon
Solar cells
共形
发射极
多晶硅太阳能电池
掺杂物
离子质谱仪
等离子体浸没离子注入
结晶硅
配置文件
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Summary:Emitted multi-crystalline silicon and black silicon solar cells are conformal doped by ion implantation using the plasma immersion ion implantation （PⅢ） technique. The non-uniformity of emitter doping is lower than 5 %. The secondary ion mass spectrometer profile indicates that the PⅢ technique obtained 100-rim shallow emitter and the emitter depth could be impelled by furnace annealing to 220 nm and 330 nm at 850 ℃ with one and two hours, respectively. Furnace annealing at 850 ℃ could effectively electrically activate the dopants in the silicon. The efficiency of the black silicon solar cell is 14.84% higher than that of the mc-silicon solar cell due to more incident light being absorbed.
Bibliography:Shen Ze-Nan, Xia Yang, Liu Bang-Wu, Liu Jin-Hu, Li Chao-Bo, and Li Yong-Tao（ Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics Chinese Academy of Sciences, Beijing 100029, China）
solar cells, plasma immersion ion implantation, conformal doping, black silicon
Emitted multi-crystalline silicon and black silicon solar cells are conformal doped by ion implantation using the plasma immersion ion implantation （PⅢ） technique. The non-uniformity of emitter doping is lower than 5 %. The secondary ion mass spectrometer profile indicates that the PⅢ technique obtained 100-rim shallow emitter and the emitter depth could be impelled by furnace annealing to 220 nm and 330 nm at 850 ℃ with one and two hours, respectively. Furnace annealing at 850 ℃ could effectively electrically activate the dopants in the silicon. The efficiency of the black silicon solar cell is 14.84% higher than that of the mc-silicon solar cell due to more incident light being absorbed.
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/23/11/118801