Light-emitting properties of BN synthesized by different techniques

Light-emitting properties of boron nitride powders of different morphology grown using various techniques were studied. All samples were hexagonal BN (h-BN), while the content of impurity phases varied considerably. The wide photoluminescence band in the visible range was observed. h-BN synthesized...

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Published inSemiconductor physics, quantum electronics, and optoelectronics Vol. 23; no. 2; pp. 193 - 200
Main Authors Rudko, G.Yu, Sartinska, L.L., Isaieva, O.F., Gule, E.G., Eren, T., Altay, E.
Format Journal Article
LanguageEnglish
Published National Academy of Sciences of Ukraine. Institute of Semi conductor physics 01.01.2020
Subjects
boron nitride
nanostructures
photoluminescence
sem
xrd
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Summary:Light-emitting properties of boron nitride powders of different morphology grown using various techniques were studied. All samples were hexagonal BN (h-BN), while the content of impurity phases varied considerably. The wide photoluminescence band in the visible range was observed. h-BN synthesized using carbothermal reduction method exhibited the highest efficiency of the photoluminescence emission. The intensity of BN emission has been interpreted in terms of interplay between the emission of intrinsic defects stabilized by carbon, carbon-related recombination centers and the centers of non-radiative recombination caused by the presence of sassolite phases in the samples.
ISSN:1560-8034
1605-6582
DOI:10.15407/spqeo23.02.193