An improved description of the dielectric breakdown in oxides based on a generalized Weibull distribution

In this work, we address modal parameter fluctuations in statistical distributions describing charge-to-breakdown ( Q BD ) and/or time-to-breakdown ( t BD ) during the dielectric breakdown regime of ultra-thin oxides, which are of high interest for the advancement of electronic technology. We reobta...

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Bibliographic Details
Published inPhysica A Vol. 361; no. 1; pp. 209 - 215
Main Authors Costa, U.M.S., Freire, V.N., Malacarne, L.C., Mendes, R.S., Picoli Jr, S., de Vasconcelos, E.A., da Silva Jr, E.F.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 15.02.2006
Subjects
Dielectric breakdown
MOS devices
Reliability
Weibull distribution
Dielectric breakdown
Weibull distribution
Reliability
MOS devices
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Summary:In this work, we address modal parameter fluctuations in statistical distributions describing charge-to-breakdown ( Q BD ) and/or time-to-breakdown ( t BD ) during the dielectric breakdown regime of ultra-thin oxides, which are of high interest for the advancement of electronic technology. We reobtain a generalized Weibull distribution ( q-Weibull), which properly describes ( t BD ) data when oxide thickness fluctuations are present, in order to improve reliability assessment of ultra-thin oxides by time-to-breakdown ( t BD ) extrapolation and area scaling. The incorporation of fluctuations allows a physical interpretation of the q-Weibull distribution in connection with the Tsallis statistics. In support to our results, we analyze t BD data of SiO 2 -based MOS devices obtained experimentally and theoretically through a percolation model, demonstrating an advantageous description of the dielectric breakdown by the q-Weibull distribution.
ISSN:0378-4371
1873-2119
DOI:10.1016/j.physa.2005.07.017