Exciton Photoluminescence of ZnO Thin Films Grown by ALD-Technique

The low-temperature exciton photoluminescence of thin ZnO films grown by atomic layer deposition (ALD) on (100) and (111) Si substrates under He-Cd (λ = 325nm) and N2 (λ = 337nm) laser excitation is studied. The structure of the films is analyzed by XRD and SEM methods. The effects of excitation int...

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Bibliographic Details
Published inPhysics procedia Vol. 76; pp. 37 - 41
Main Authors Labzowskaya, M.E., Akopyan, I.Kh, Novikov, B.V., Serov, A.E., Filosofov, N.G., Basov, L.L., Drozd, V.E., Lisachenko, A.A.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 2015
Subjects
Atomic layer deposition method
localized exitons
photoluminescence
surface states
ZnO thin films
surface states
ZnO thin films
localized exitons
Atomic layer deposition method
photoluminescence
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Summary:The low-temperature exciton photoluminescence of thin ZnO films grown by atomic layer deposition (ALD) on (100) and (111) Si substrates under He-Cd (λ = 325nm) and N2 (λ = 337nm) laser excitation is studied. The structure of the films is analyzed by XRD and SEM methods. The effects of excitation intensity and laser irradiation on the photoluminescence spectra are investigated. A wide asymmetric emission band attributed to excitons localized in the near surface potential fluctuations has been observed in photoluminescence spectra of the film and powder samples.
ISSN:1875-3892
1875-3892
DOI:10.1016/j.phpro.2015.10.007