Topological Phase in Non-centrosymmetric Material NaSnBi

We predict that a non-eentrosymmetric material NaSnBi locates in a three-dimensional non-trivial topological phase under ambient pressure based on first-principle calculations. By deriving the effective model around the Г point, we find that the topological phase transition is driven by a Rashba spi...

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Bibliographic Details
Published inChinese physics letters Vol. 33; no. 12; pp. 115 - 119
Main Author 代霞 勒聪聪 吴贤新 秦盛山 林志萍 胡江平
Format Journal Article
LanguageEnglish
Published 01.12.2016
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Summary:We predict that a non-eentrosymmetric material NaSnBi locates in a three-dimensional non-trivial topological phase under ambient pressure based on first-principle calculations. By deriving the effective model around the Г point, we find that the topological phase transition is driven by a Rashba spin-orbital coupling through an odd number of pairs of band touch due to a small anisotropic gap caused by quintie dispersion terms. In contrast to conventional topological insulators, the spin texture of the surface Dirac cone is right-handed and the surface states are strikingly different for different surface terminations.
Bibliography:Xia Dai1, Cong-Cong Le1, Xian-Xin Wu1, Sheng-Shan Qin1, Zhi-Ping Lin1, Jiang-Ping Hu1,2(1. Institute of Physics, Chinese Academy of Sciences, Beijing 100190; 2.Collaborative Innovation Center of Quantum Matter, Beijing 100190)
11-1959/O4
We predict that a non-eentrosymmetric material NaSnBi locates in a three-dimensional non-trivial topological phase under ambient pressure based on first-principle calculations. By deriving the effective model around the Г point, we find that the topological phase transition is driven by a Rashba spin-orbital coupling through an odd number of pairs of band touch due to a small anisotropic gap caused by quintie dispersion terms. In contrast to conventional topological insulators, the spin texture of the surface Dirac cone is right-handed and the surface states are strikingly different for different surface terminations.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307x/33/12/127301