Electrical, spectral, and chemical properties of 1.8 MeV proton irradiated AlGaN/GaN HEMT structures as a function of proton fluence

We have characterized high-electron mobility transistors and corresponding unprocessed material as a function of 1.8 MeV proton fluence. Electrical data shows degradation of the electrical contacts at low fluences (10/sup 11/-10/sup 14/ p/sup +//cm/sup 2/) and degradation of the channel properties f...

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Bibliographic Details
Published inIEEE transactions on nuclear science Vol. 50; no. 6; pp. 1934 - 1941
Main Authors White, B.D., Bataiev, M., Goss, S.H., Hu, X., Karmarkar, A., Fleetwood, D.M., Schrimpf, R.D., Schaff, W.J., Brillson, L.J.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.12.2003
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Aluminum gallium nitride
Chemicals
Contacts
Degradation
Epitaxial layers
Gallium nitride
HEMTs
Mass spectroscopy
MODFETs
Protons
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Summary:We have characterized high-electron mobility transistors and corresponding unprocessed material as a function of 1.8 MeV proton fluence. Electrical data shows degradation of the electrical contacts at low fluences (10/sup 11/-10/sup 14/ p/sup +//cm/sup 2/) and degradation of the channel properties for higher fluences. In conjunction with the electrical data, cathodoluminescence and secondary-ion mass spectrometry results suggest mechanisms for the higher fluence degradation.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2003.821827