Application of metal induced unilaterally crystallized polycrystalline silicon thin-film transistor technology to system-on-glass display

• Published in: Journal of non-crystalline solids Vol. 352; no. 9-20; pp. 1741 - 1744
• Main Authors: Wu, Chunya, Meng, Zhiguo, Xiong, Shaozhen, Wong, Man, Kwok, Hoi Sing
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 15.06.2006; Elsevier
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Miscellaneous; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Thin film transistors; 85.30.De; Thin film transistors; 42.79.Kr; 85.40.−e; 85.60.Bt; High performance; Polycrystal; 85.40.-e; Capacitance; Silicon; Thin film transistor; Manufacturing; Thin film
• ISSN: 0022-3093; 1873-4812
• DOI: 10.1016/j.jnoncrysol.2005.11.150

Based on MIUC technology, high-performance poly-Si TFT row scanning and column driving circuits were fabricated. The starting operating voltage of row scanning circuit is 3.5V. Under an operating voltage of 5V and a loading capacitance of 22pf, the falling edge is 150ns, the rising edge is 205ns and the maximum operating frequency is higher than 1MHz. For MIUC poly-Si TFT column driving circuit, the starting operating voltage is 3.5V. Under an operating voltage of 5V and a loading capacitance of 22pf, the rising edge is 200ns and the signal fading rate is 15% during a frame period of 64μs. Parallel transfer is used for the RGB signals, achieving a highest operating frequency of 4MHz. Using these row scanning and column driving circuits, a simple 80×RGB×60 AMLCD display system on glass substrate was made and demonstrated good video display effect.