Theoretical study on the charge transfer mechanism at donor/acceptor interface: Why TTF/TCNQ is inadaptable to photovoltaics?

A combined molecular dynamics (MD) and quantum chemical (QC) simulation method is utilized to investigate charge generation mechanism at TTF/TCNQ (tetrathiafulvalene/tetracyanoquinodimethane) heterojunction, which is a controversial donor/acceptor (D/A) interface for organic photovoltaic (OPV) devic...

Full description

Saved in:
Bibliographic Details
Published inThe Journal of chemical physics Vol. 145; no. 24; pp. 244705 - 244713
Main Authors Li, Shuang-Bao, Geng, Yun, Duan, Yu-Ai, Sun, Guang-Yan, Zhang, Min, Qiu, Yong-Qing, Su, Zhong-Min
Format Journal Article
LanguageEnglish
Published United States American Institute of Physics 28.12.2016
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:A combined molecular dynamics (MD) and quantum chemical (QC) simulation method is utilized to investigate charge generation mechanism at TTF/TCNQ (tetrathiafulvalene/tetracyanoquinodimethane) heterojunction, which is a controversial donor/acceptor (D/A) interface for organic photovoltaic (OPV) devices. The TTF/TCNQ complexes extracted from MD simulation are classified into parallel and herringbone packings. And then, the amounts of charge transferred from ground states to different excited states and the corresponding energies of charge transfer (CT) state are compared and analyzed using QC simulation. Moreover, the electron transfer/recombination rates for these interfacial configurations are also studied. From these data, we have elucidated the underlying reason why TTF/TCNQ heterojunction is inadaptable to OPV application. One main reason is that large | Δ G CT | (the absolute value of Gibbs free energy change of CT) forms a large energy barrier, limiting exciton dissociation at the TTF/TCNQ heterojunction, and small | Δ G CR | (the absolute value of Gibbs free energy change of charge recombination) performs the easy recombination to the ground state.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 14
content type line 23
ISSN:0021-9606
1089-7690
1089-7690
DOI:10.1063/1.4972005