Estimation of Local Crystallization of a-Si:H Thin Films by Nanosecond Pulsed Laser Irradiation Through Local Temperature Simulation

We present a detailed study of the wavelength influence in pulsed laser annealing of amorphous silicon thin films, comparing the results for material modification at different fluence regimes both in the three fundamental harmonics of standard DPSS laser sources, UV (355nm), visible (532nm) and IR (...

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Bibliographic Details
Published inPhysics procedia Vol. 39; pp. 286 - 294
Main Authors García, O., García-Ballesteros, J.J., Munoz-Martin, D., Núñez-Sánchez, S., Morales, M., Carabe, J., Torres, I., Gandía, J.J., Molpeceres, C.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 2012
Subjects
amorphous silicon
annealing
COMSOL Multiphysics
Laser crystallization
amorphous silicon
Laser crystallization
COMSOL Multiphysics
annealing
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Summary:We present a detailed study of the wavelength influence in pulsed laser annealing of amorphous silicon thin films, comparing the results for material modification at different fluence regimes both in the three fundamental harmonics of standard DPSS laser sources, UV (355nm), visible (532nm) and IR (1064nm), and KrF (248nm) excimer laser sources. Samples of hydrogenated amorphous silicon thin films were irradiated and characterized with MicroRaman techniques. A finite element model (FEM) was developed in COMSOL to simulate the process. The numerical and experimental results are presented, proving that the process can be predicted with a model based on heat transport.
ISSN:1875-3892
1875-3892
DOI:10.1016/j.phpro.2012.10.040