Rapid recrystallization of amorphous silicon utilizing the plasma jet at atmospheric pressure

• Published in: Journal of non-crystalline solids Vol. 352; no. 9-20; pp. 989 - 992
• Main Authors: Sakurai, Yusuke, Yeo, Mina, Shirai, Hajime, Kobayashi, Tomohiro, Hasegawa, Yasuhiro
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 15.06.2006; Elsevier
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physics; Silicon; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Thin film transistors; Time resolved measurements; Silicon; Time resolved measurements; Thin film transistors; Thin films; Raman spectra; Plasma jets; Recrystallization; Plasma assisted processing; Polycrystals; Amorphous state; High frequency
• ISSN: 0022-3093; 1873-4812
• DOI: 10.1016/j.jnoncrysol.2006.01.051

The rapid recrystallization of amorphous silicon utilizing the very high frequency (VHF) plasma jet of argon at atmospheric pressure is presented. Highly crystallized polycrystalline Si film was synthesized by optimizing the translating velocity of the substrate stage and flow rate of argon. The temperature of the plasma exposure area reached at 1300°C and the recrystallization of a-Si proceeded with a time constant of 10–50ms. The effects of the translating velocity of the substrate stage and flow rate of argon on the rapid recrystallization of a-Si are demonstrated along with its mechanism.