X-band AlGaN/GaN HEMTs with high microwave power performance

• Published in: Science China. Physics, mechanics & astronomy Vol. 54; no. 3; pp. 442 - 445
• Main Authors: Peng, MingZeng, Zheng, YingKui, Wei, Ke, Chen, XiaoJuan, Liu, XinYu
• Format: Journal Article
• Language: English
• Published: Heidelberg SP Science China Press 01.03.2011; Springer Nature B.V
• Subjects: Aluminum gallium nitrides; Astronomy; Classical and Continuum Physics; Continuous radiation; Gain; Gallium nitrides; High electron mobility transistors; Microwaves; Observations and Techniques; Physics; Physics and Astronomy; Research Paper; Semiconductor devices; Silicon substrates; Superhigh frequencies; X-band; X-band; high-electron-mobility transistor; GaN; power-added efficiency
• ISSN: 1674-7348; 1869-1927
• DOI: 10.1007/s11433-010-4226-4

An X-band AlGaN/GaN high-electron-mobility transistor (HEMT) on SiC substrate with high microwave power performances has been achieved. Its small-signal characteristics with a gate-length of 0.4 μm showed a unity current gain cut-off frequency ( f T ) of 22 GHz and a maximum oscillation frequency ( f max ) of 65 GHz. The GaN HEMT device with a gate width of 1 mm exhibited a continuous-wave saturated output power of 10.2 W and a linear gain of 14.8 dB at 8 GHz, and successfully achieved the power-added efficiency (PAE) as high as 69.2%, which is very suitable for X-band power applications.