Investigation on Sb-rich Sb–Se–Te phase-change material for phase change memory application

• Published in: Journal of non-crystalline solids Vol. 358; no. 17; pp. 2409 - 2411
• Main Authors: Wu, Liangcai, Zhu, Min, Song, Zhitang, Lv, Shilong, Zhou, Xilin, Peng, Cheng, Rao, Feng, Song, Sannian, Liu, Bo, Feng, Songlin
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Oxford Elsevier B.V 01.09.2012; Elsevier
• Subjects: Composition and phase identification; Condensed matter: structure, mechanical and thermal properties; Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Other nonelectronic physical properties; Phase change; Phase diagrams and microstructures developed by solidification and solid-solid phase transformations; Physical properties of thin films, nonelectronic; Physics; Reset; Sb-rich; Sb65Se6Te29; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Reset; Sb-rich; Phase change; Sb65Se6Te29; Voltage threshold; Crystalline phase; Random-access storage; Phase transformations; Random phase; Gallium phosphide; Infrared spectra; Thin films; Energy gap; Ultraviolet radiation; Temperature effects; Near infrared spectrum; Threshold voltage; PCM material; Activation energy
• ISSN: 0022-3093; 1873-4812
• DOI: 10.1016/j.jnoncrysol.2011.12.087

Sb-rich Sb65Se6Te29 film was investigated for phase change random access memory (PCRAM) application. The crystallization temperature of the Sb65Se6Te29 film is 174°C and the crystalline activation energy is about 2.7eV. The 10-years' failure temperature for the Sb65Se6Te29 film is about 87°C, sufficient for most consumer applications. The results of UV/visible/NIR spectrophotometer measurements show that the optical gap of the Sb65Se6Te29 film decreases as it transforms from amorphous phase to crystalline phase. Compared with the Ge2Sb2Te5 based PCRAM cell, the Sb65Se6Te29 based PCRAM cell has the advantages of lower threshold voltage and larger resistance contrast. Furthermore, as short as 10ns electrical pulse can achieve Reset operation with a Reset voltage of 2.9V. ►Sb-rich Sb–Se ternary alloy (Sb65Se6Te29) with appropriate Te was proposed. ►Crystallization temperature and activation energy are improved. ►As short as 10ns electrical pulse can achieve Reset operation with lower voltage.