Effect of germanium fraction on the effective minority carrier lifetime in thin film amorphous-Si/crystalline-Si1xGex/crystalline-Si heterojunction solar cells
The effect of germanium fraction on the effective minority carrier lifetime (τeff ) for epitaxial Si1-xGex layers is extracted using measurements on amorphous(a) Si(n+)/crystalline(c)-Si1-xGex(p)/crystalline(c)-Si(p+) heterojunction solar cells with x = 0.25, 0.41 and 0.56. The τeff extracted for Si...
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Published in | AIP advances Vol. 3; no. 5; p. 052119 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
AIP Publishing LLC
01.05.2013
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Subjects | |
Online Access | Get full text |
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Summary: | The effect of germanium fraction on the effective minority carrier lifetime (τeff
) for epitaxial Si1-xGex layers is extracted using measurements on amorphous(a) Si(n+)/crystalline(c)-Si1-xGex(p)/crystalline(c)-Si(p+) heterojunction solar cells with x = 0.25, 0.41 and 0.56. The τeff extracted for Si0.75Ge0.25 is ∼1 μs, decreasing to ∼ 40 ns for Si0.44Ge0.56. In addition, the band-gap voltage offset (Woc) increases from 0.5 eV for Si to 0.65 eV for 56% Ge indicating an increase in non-radiative recombination consistent with the reduction in effective lifetime. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 2158-3226 2158-3226 |
DOI: | 10.1063/1.4805078 |