Influence of layer deformation on thermal quenching of exciton photoluminescence in short-period GaAs/AlAs superlattices

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Bibliographic Details
Published inSemiconductor science and technology Vol. 19; no. 3; pp. 475 - 479
Main Authors Korbutyak, D V, Klad'ko, V P, Krylyuk, S G, Litovchenko, V G, Shalimov, A V, Kuchuk, A V
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.03.2004
Institute of Physics
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Multilayers, superlattices
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
Physics
Aluminium arsenides
Gallium arsenides
Inorganic compounds
Semiconductor materials
Non radiative recombination
Photoluminescence
Binary compounds
XRD
Experimental study
Thickness
Excitons
Superlattices
Mismatch lattice
Luminescence quenching
Activation energy
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/19/3/033