Vertical GaN-based trench metal oxide semiconductor field-effect transistors on a free-standing GaN substrate with blocking voltage of 1.6 kV

This paper reports the characteristics of vertical GaN-based trench metal-oxide-semiconductor field-effect transistors on a free-standing GaN substrate with a blocking voltage of 1.6 kV. The high blocking voltage was obtained by using field plate edge termination around the isolation mesa of the tra...

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Bibliographic Details
Published inApplied physics express Vol. 7; no. 2; pp. 21002 - 21004
Main Authors Oka, Tohru, Ueno, Yukihisa, Ina, Tsutomu, Hasegawa, Kazuya
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.02.2014
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Summary:This paper reports the characteristics of vertical GaN-based trench metal-oxide-semiconductor field-effect transistors on a free-standing GaN substrate with a blocking voltage of 1.6 kV. The high blocking voltage was obtained by using field plate edge termination around the isolation mesa of the transistor. To our knowledge, the blocking voltage is the highest ever reported for vertical GaN-based transistors on free-standing GaN substrates. Normally off operation with a threshold voltage of 7 V is also demonstrated.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.7.021002