Single event transient pulse attenuation effect in three-transistor inverter chain

In this paper, compared with two-transistor （2T） inverter chain, the production and propagation of P-hit single event transient （SET） in three-transistor （3T） inverter chain is studied in depth based on three-dimensional numerical simulations in a 90 nm bulk complementary metal oxide semiconductor （...

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Bibliographic Details
Published inScience China. Technological sciences Vol. 55; no. 4; pp. 867 - 871
Main Authors Chen, JianJun, Chen, ShuMing, Liang, Bin, Liu, FanYu
Format Journal Article
LanguageEnglish
Published Heidelberg SP Science China Press 01.04.2012
Subjects
Attenuation
Chains
China
CMOS
Computer simulation
Engineering
Inverters
Metal oxide semiconductors
Three dimensional
三维数值模拟
互补金属氧化物半导体
单事件
布局结构
晶体管逆变器
瞬态脉冲
衰减效应
链
pulse attenuation effect
parasitic bipolar amplification effect
single event transient (SET)
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Summary:In this paper, compared with two-transistor （2T） inverter chain, the production and propagation of P-hit single event transient （SET） in three-transistor （3T） inverter chain is studied in depth based on three-dimensional numerical simulations in a 90 nm bulk complementary metal oxide semiconductor （CMOS） technology. The pulse attenuation effect is found in 3T inverter chain, and the pulse can not completely propagate through the inverter chain as LET increases. The discovery will provide a new insight into SET hardened design, the 3T inverter layout structure （or similar layout structures） will be a better method in integrated circuits （ICs） design in radiation environment.
Bibliography:In this paper, compared with two-transistor （2T） inverter chain, the production and propagation of P-hit single event transient （SET） in three-transistor （3T） inverter chain is studied in depth based on three-dimensional numerical simulations in a 90 nm bulk complementary metal oxide semiconductor （CMOS） technology. The pulse attenuation effect is found in 3T inverter chain, and the pulse can not completely propagate through the inverter chain as LET increases. The discovery will provide a new insight into SET hardened design, the 3T inverter layout structure （or similar layout structures） will be a better method in integrated circuits （ICs） design in radiation environment.
11-5845/TH
single event transient （SET）, pulse attenuation effect, parasitic bipolar amplification effect
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1674-7321
1869-1900
DOI:10.1007/s11431-012-4753-5