Improved resistive switching characteristics of atomic layer deposited Al2O3/La2O3/Al2O3 multi-stacked films with Al+ implantation

Resistive random access memory (RRAM) devices were designed using Al 2 O 3 /La 2 O 3 /Al 2 O 3 multi-stacked films grown by atomic layer deposition as functional layers. The impact of Al + ions implantation on the resistive switching performances of the RRAM devices was investigated. Compared with t...

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Bibliographic Details
Published inJournal of materials science. Materials in electronics Vol. 30; no. 13; pp. 12577 - 12583
Main Authors Wang, Xing, Liu, Hongxia, Zhao, Lu, Wang, Yongte, Wang, Shulong
Format Journal Article
LanguageEnglish
Published New York Springer US 01.07.2019
Springer Nature B.V
Subjects
Aluminum oxide
Atomic layer epitaxy
Characterization and Evaluation of Materials
Chemistry and Materials Science
Disruption
Filaments
Ion implantation
Lanthanum oxides
Materials Science
Memory devices
Optical and Electronic Materials
Performance enhancement
Random access memory
Switching
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Summary:Resistive random access memory (RRAM) devices were designed using Al 2 O 3 /La 2 O 3 /Al 2 O 3 multi-stacked films grown by atomic layer deposition as functional layers. The impact of Al + ions implantation on the resistive switching performances of the RRAM devices was investigated. Compared with the control sample without Al + implantation, forming-free operation and larger ON/OFF resistance ratio were achieved in the Al + implanted RRAM device. Besides, the resistive switching stability and electrical uniformity of the implanted device were enhanced. The enhanced performances of the Al + implanted RRAM device were deduced by the improvement in the formation and disruption of conducting filaments in the Al 2 O 3 /La 2 O 3 /Al 2 O 3 multi-stacked films.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-019-01618-0