Peculiarities of the thermal activation of carriers in CdSe/ZnSe QD structures
The results of experimental and theoretical investigations of thermal quenching of quantum dot (QD) photoluminescence (PL) in CdSe/ZnSe heterostructures are presented. It is found that at low temperatures, when carriers are strongly localized in QDs, QD PL intensity depends linearly on excitation po...
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| Published in | Journal of materials science. Materials in electronics Vol. 20; no. Suppl 1; pp. 102 - 106 |
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| Main Authors | , , , , , |
| Format | Journal Article |
| Language | English |
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Springer US
2009
Springer Nature B.V |
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| Abstract | The results of experimental and theoretical investigations of thermal quenching of quantum dot (QD) photoluminescence (PL) in CdSe/ZnSe heterostructures are presented. It is found that at low temperatures, when carriers are strongly localized in QDs, QD PL intensity depends linearly on excitation power, but at higher temperatures, when carriers are thermally excited to the wetting layer, this dependence becomes superlinear. The activation energy of thermal quenching of QD PL intensity is found to be smaller than the sum of QD electron and hole potential depths. It is shown that these facts are explained satisfactorily by the model of independent electron and hole capture (escape) in QDs. |
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| AbstractList | Issue Title: Special Issue: Selected Papers from the Second International Conference on Optical, Optoelectronic and Photonic Materials and Applications, 2007, 30 July - 3 August 2007, London, UK Guest Editors: Stephen J. Sweeney and Steffi Krause The results of experimental and theoretical investigations of thermal quenching of quantum dot (QD) photoluminescence (PL) in CdSe/ZnSe heterostructures are presented. It is found that at low temperatures, when carriers are strongly localized in QDs, QD PL intensity depends linearly on excitation power, but at higher temperatures, when carriers are thermally excited to the wetting layer, this dependence becomes superlinear. The activation energy of thermal quenching of QD PL intensity is found to be smaller than the sum of QD electron and hole potential depths. It is shown that these facts are explained satisfactorily by the model of independent electron and hole capture (escape) in QDs.[PUBLICATION ABSTRACT] The results of experimental and theoretical investigations of thermal quenching of quantum dot (QD) photoluminescence (PL) in CdSe/ZnSe heterostructures are presented. It is found that at low temperatures, when carriers are strongly localized in QDs, QD PL intensity depends linearly on excitation power, but at higher temperatures, when carriers are thermally excited to the wetting layer, this dependence becomes superlinear. The activation energy of thermal quenching of QD PL intensity is found to be smaller than the sum of QD electron and hole potential depths. It is shown that these facts are explained satisfactorily by the model of independent electron and hole capture (escape) in QDs. |
| Author | Kryshtab, T. Korsunska, N. Kazakov, I. Venger, Ye Sadofyev, Yu Borkovska, L. |
| Author_xml | – sequence: 1 givenname: L. surname: Borkovska fullname: Borkovska, L. email: bork@isp.kiev.ua organization: V. Lashkaryov Institute of Semiconductor Physics NASU – sequence: 2 givenname: N. surname: Korsunska fullname: Korsunska, N. organization: V. Lashkaryov Institute of Semiconductor Physics NASU – sequence: 3 givenname: Ye surname: Venger fullname: Venger, Ye organization: V. Lashkaryov Institute of Semiconductor Physics NASU – sequence: 4 givenname: Yu surname: Sadofyev fullname: Sadofyev, Yu organization: P.N. Lebedev Physical Institute RAS – sequence: 5 givenname: I. surname: Kazakov fullname: Kazakov, I. organization: P.N. Lebedev Physical Institute RAS – sequence: 6 givenname: T. surname: Kryshtab fullname: Kryshtab, T. organization: Department of Material Sciences, ESFM-IPN |
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| Cites_doi | 10.1016/j.jcrysgro.2004.11.365 10.1063/1.1568538 10.1103/PhysRevB.60.8276 10.1016/j.jnoncrysol.2006.03.015 10.1002/1521-396X(199711)164:1<297::AID-PSSA297>3.0.CO;2-5 10.1103/PhysRevB.51.5171 10.1103/PhysRevB.47.9545 10.1016/S0022-0248(98)80124-3 10.1103/PhysRevB.67.245318 10.1002/pssc.200303219 |
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| Keywords | Excitation Power Density Thermal Quenching Nonradiative Recombination Center Thermal Escape Carrier Capture |
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| References | Lashkarev Lubchenko SheinkmanV.E. A.V. M.K.Nonequilibrium Processes in Semiconductors1981KievNaukova dumka SunK.W.KechiantzA.J. Non-Cryst. Sol.2006352235510.1016/j.jnoncrysol.2006.03.0152006JNCS..352.2355S1:CAS:528:DC%2BD28XmsF2hu78%3D Le RuE.C.FackJ.MurrayR.Phys. Rev. B20036724531810.1103/PhysRevB.67.2453182003PhRvB..67x5318L BorkovskaL.V.BeyerR.HoffmannM.HolzheyA.KorsunskaN.O.SadofyevYu.G.WeberJ.Defect Diffus. Forum2204230–23255 SanguinettiS.HeniniM.Grassi AlessiM.CapizziM.FrigeriP.FranchiS.Phys. Rev. B199960827610.1103/PhysRevB.60.82761999PhRvB..60.8276S1:CAS:528:DyaK1MXlvFWksLs%3D GrundmanM.BimbergD.Phys. Status Solidi (a)199716429710.1002/1521-396X(199711)164:1<297::AID-PSSA297>3.0.CO;2-51997PSSAR.164..297G BacherG.HartmannC.SchweizerH.HeldT.MahlerG.KickelH.Phys. Rev. B199347954510.1103/PhysRevB.47.95451993PhRvB..47.9545B1:CAS:528:DyaK3sXis1eit78%3D DuarteC.A.da SilvaE.C.F.QuivyA.A.da SilvaM.J.MartiniS.LeiteJ.R.MenesesE.A.LaurettoE.J. Appl. Phys.200393627910.1063/1.15685382003JAP....93.6279D1:CAS:528:DC%2BD3sXjslSjtr0%3D PellegriniV.AtanasovR.TredicucciA.BeltramF.AmzuliniC.SorbaL.VanzettiL.FranciosiA.Phys. Rev. B199551517110.1103/PhysRevB.51.51711995PhRvB..51.5171P1:CAS:528:DyaK2MXkt1OhtL0%3D BorkovskaL.BeyerR.GudymenkoO.KladkoV.KorsunskaN.KryshtabT.SadofyevYu.VengerYe.WeberJ.J. Cryst. Growth2004275228110.1016/j.jcrysgro.2004.11.3652005JCrGr.275.2281B MorhainC.BrownlieG.D.TournieE.MasiA.OngarettoC.PriorK.A.FaurieJ.-P.CavenettB.C.J. Cryst. Growth1998184/1855911:CAS:528:DyaK1cXitVegsLo%3D Dal DonB.KoharyK.TsitsischviliE.EichmannR.BaranovskiiS.D.TomasP.KaltH.Phys. Status Solidi (c)20030150910.1002/pssc.2003032191:CAS:528:DC%2BD3sXot1Gjt7s%3D L.V. Borkovska (9457_CR7) 2204; 230–232 K.W. Sun (9457_CR12) 2006; 352 C.A. Duarte (9457_CR10) 2003; 93 C. Morhain (9457_CR5) 1998; 184/185 (9457_CR9) 1981 M. Grundman (9457_CR1) 1997; 164 E.C. Le Ru (9457_CR2) 2003; 67 B. Dal Don (9457_CR6) 2003; 0 V. Pellegrini (9457_CR11) 1995; 51 S. Sanguinetti (9457_CR3) 1999; 60 G. Bacher (9457_CR4) 1993; 47 L. Borkovska (9457_CR8) 2004; 275 |
| References_xml | – volume: 275 start-page: 2281 year: 2004 ident: 9457_CR8 publication-title: J. Cryst. Growth doi: 10.1016/j.jcrysgro.2004.11.365 contributor: fullname: L. Borkovska – volume: 93 start-page: 6279 year: 2003 ident: 9457_CR10 publication-title: J. Appl. Phys. doi: 10.1063/1.1568538 contributor: fullname: C.A. Duarte – volume: 60 start-page: 8276 year: 1999 ident: 9457_CR3 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.60.8276 contributor: fullname: S. Sanguinetti – volume: 352 start-page: 2355 year: 2006 ident: 9457_CR12 publication-title: J. Non-Cryst. Sol. doi: 10.1016/j.jnoncrysol.2006.03.015 contributor: fullname: K.W. Sun – volume: 230–232 start-page: 55 year: 2204 ident: 9457_CR7 publication-title: Defect Diffus. Forum contributor: fullname: L.V. Borkovska – volume: 164 start-page: 297 year: 1997 ident: 9457_CR1 publication-title: Phys. Status Solidi (a) doi: 10.1002/1521-396X(199711)164:1<297::AID-PSSA297>3.0.CO;2-5 contributor: fullname: M. Grundman – volume: 51 start-page: 5171 year: 1995 ident: 9457_CR11 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.51.5171 contributor: fullname: V. Pellegrini – volume: 47 start-page: 9545 year: 1993 ident: 9457_CR4 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.47.9545 contributor: fullname: G. Bacher – volume-title: Nonequilibrium Processes in Semiconductors year: 1981 ident: 9457_CR9 – volume: 184/185 start-page: 591 year: 1998 ident: 9457_CR5 publication-title: J. Cryst. Growth doi: 10.1016/S0022-0248(98)80124-3 contributor: fullname: C. Morhain – volume: 67 start-page: 245318 year: 2003 ident: 9457_CR2 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.67.245318 contributor: fullname: E.C. Le Ru – volume: 0 start-page: 1509 year: 2003 ident: 9457_CR6 publication-title: Phys. Status Solidi (c) doi: 10.1002/pssc.200303219 contributor: fullname: B. Dal Don |
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| SubjectTerms | Cadmium selenides Carriers Characterization and Evaluation of Materials Chemistry and Materials Science Electronics Excitation Intermetallics Materials Science Optical and Electronic Materials Quantum dots Quenching Zinc selenides |
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| Title | Peculiarities of the thermal activation of carriers in CdSe/ZnSe QD structures |
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