Peculiarities of the thermal activation of carriers in CdSe/ZnSe QD structures

The results of experimental and theoretical investigations of thermal quenching of quantum dot (QD) photoluminescence (PL) in CdSe/ZnSe heterostructures are presented. It is found that at low temperatures, when carriers are strongly localized in QDs, QD PL intensity depends linearly on excitation po...

Full description

Saved in:
Bibliographic Details
Published inJournal of materials science. Materials in electronics Vol. 20; no. Suppl 1; pp. 102 - 106
Main Authors Borkovska, L., Korsunska, N., Venger, Ye, Sadofyev, Yu, Kazakov, I., Kryshtab, T.
Format Journal Article
LanguageEnglish
Published Boston Springer US 2009
Springer Nature B.V
Subjects
Cadmium selenides
Carriers
Characterization and Evaluation of Materials
Chemistry and Materials Science
Electronics
Excitation
Intermetallics
Materials Science
Optical and Electronic Materials
Quantum dots
Quenching
Zinc selenides
Excitation Power Density
Thermal Quenching
Nonradiative Recombination Center
Thermal Escape
Carrier Capture
Online AccessGet full text

Cover

More Information
Summary:The results of experimental and theoretical investigations of thermal quenching of quantum dot (QD) photoluminescence (PL) in CdSe/ZnSe heterostructures are presented. It is found that at low temperatures, when carriers are strongly localized in QDs, QD PL intensity depends linearly on excitation power, but at higher temperatures, when carriers are thermally excited to the wetting layer, this dependence becomes superlinear. The activation energy of thermal quenching of QD PL intensity is found to be smaller than the sum of QD electron and hole potential depths. It is shown that these facts are explained satisfactorily by the model of independent electron and hole capture (escape) in QDs.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-007-9457-4