A theoretical study of differing active region doping profiles for W-band (75–110 GHz) InP Gunn diodes

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Bibliographic Details
Published inSemiconductor science and technology Vol. 18; no. 8; pp. 794 - 802
Main Authors Dunn, G M, Kearney, M J
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.08.2003
Institute of Physics
Subjects
Applied sciences
Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)
Electronics
Exact sciences and technology
Miscellaneous
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Monte Carlo method
Binary compound
Fluctuations
Frequency band
Gunn diode
Theoretical study
Microwave
Numerical simulation
Doping profile
Indium phosphide
Inorganic compound
III-V semiconductors
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/18/8/313