Fabrication and characterization of amorphous ITO/p-Si heterojunction solar cell

• Published in: Science China. Technological sciences Vol. 56; no. 8; pp. 1870 - 1876
• Main Authors: He, Bo, Wang, HongZhi, Li, YaoGang, Ma, ZhongQuan, Xu, Jing, Zhang, QingHong, Wang, ChunRui, Xing, HuaiZhong, Zhao, Lei, Wang, DunDong
• Format: Journal Article
• Language: English
• Published: Berlin/Heidelberg Springer Berlin Heidelberg 01.08.2013
• Subjects: Current density; Engineering; ITO膜; P-Si; X射线光电子能谱; 可见分光光度计; 太阳能电池; 异质结; 短路电流密度; 非晶; amorphous indium-tin-oxide (a-ITO) film; characteristics; –; radio-frequency (RF) magnetron sputtering; heterojunction solar cell; current-voltage
• ISSN: 1674-7321; 1869-1900
• DOI: 10.1007/s11431-013-5287-1

Amorphous indium-tin-oxide（a-ITO） film was deposited by radio-frequency（RF） magnetron sputtering at 180°C substrate temperature on the texturized p-Si wafer to fabricate a-ITO/p-Si heterojunction solar cell.The microstructural,optical and electrical properties of the a-ITO film were characterized by XRD,SEM,XPS,UV-VIS spectrophotometer,four-point probe and Hall effect measurement,respectively.The electrical properties of heterojunction were investigated by I-V measurement,which reveals that the heterojunction shows strong rectifying behavior under a dark condition.The ideality factor and the saturation current density of this diode are 2.26 and 1.58×10-4 A cm-2,respectively.And the value of IF/IR（IF and IR stand for forward and reverse currents,respectively） at 1 V is found to be as high as 21.5.For the a-ITO/p-Si heterojunction solar cell,the a-ITO thin film acts not only as an emitter layer,but also as an anti-reflected coating film.The conversion efficiency of the fabricated a-ITO/p-Si heterojunction cell is approximately 1.1%,under 100 mW cm-2 illumination（AM1.5 condition）.And the open-circuit voltage（Voc）,short-circuit current density（J SC）,filll factor（FF） are 280 mV,9.83 mA cm 2 and 39.9%,respectively.Because the ITO film deposited at low temperature is amorphous,it can effectively reduce the interface states between ITO and p-Si.The barrier height and internal electric field,which is near the surface of p-Si,can effectively be enhanced.Thus we can see the great photovoltaic effect.