Deep-ultraviolet integrated photonic and optoelectronic devices: A prospect of the hybridization of group III-nitrides, III-oxides, and two-dimensional materials

• Published in: Journal of semiconductors Vol. 40; no. 12; pp. 121801 - 121848
• Main Authors: Alfaraj, Nasir, Min, Jung-Wook, Kang, Chun Hong, Alatawi, Abdullah A., Priante, Davide, Subedi, Ram Chandra, Tangi, Malleswararao, Ng, Tien Khee, Ooi, Boon S.
• Format: Journal Article
• Language: English
• Published: Chinese Institute of Electronics 01.12.2019
• Subjects: deep-ultraviolet; hybrid; optoelectronics; photonics; ultraviolet
• ISSN: 1674-4926; 2058-6140
• DOI: 10.1088/1674-4926/40/12/121801

Progress in the design and fabrication of ultraviolet and deep-ultraviolet group III-nitride optoelectronic devices, based on aluminum gallium nitride and boron nitride and their alloys, and the heterogeneous integration with two-dimensional and oxide-based materials is reviewed. We emphasize wide-bandgap nitride compound semiconductors (i.e., (B, Al, Ga)N) as the deep-ultraviolet materials of interest, and two-dimensional materials, namely graphene, two-dimensional boron nitride, and two-dimensional transition metal dichalcogenides, along with gallium oxide, as the hybrid integrated materials. We examine their crystallographic properties and elaborate on the challenges that hinder the realization of efficient and reliable ultraviolet and deep-ultraviolet devices. In this article we provide an overview of aluminum nitride, sapphire, and gallium oxide as platforms for deep-ultraviolet optoelectronic devices, in which we criticize the status of sapphire as a platform for efficient deep-ultraviolet devices and detail advancements in device growth and fabrication on aluminum nitride and gallium oxide substrates. A critical review of the current status of deep-ultraviolet light emission and detection materials and devices is provided.