Determination of spin- and valley-split energy levels in strained Si quantum wells

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Bibliographic Details
Published inSemiconductor science and technology Vol. 12; no. 4; pp. 384 - 388
Main Authors Koester, S J, Ismail, K, Chu, J O
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.04.1997
Institute of Physics
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states
Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Fermi surface: calculations and measurements; effective mass, g factor
Physics
Binary alloys
Semiconductor alloys
Germanium alloys
Silicon alloys
Electronic structure
Quantum wells
Silicon
Experimental study
Magnetoresistance
Landé factor
Shubnikov-de Haas effect
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/12/4/007