The influence of neutron-irradiation at low temperatures on the dielectric parameters of 3C-SiC

3C-SiC wafers were irradiated with neutrons of various fluences and at low (200–400°C) irradiation temperatures. Fourier transform infrared (FTIR) reflectance spectra were obtained for the samples, and the spectra used to extract the dielectric parameters for each specimen, using statistical curve-f...

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Bibliographic Details
Published inPhysica. B, Condensed matter Vol. 439; pp. 169 - 172
Main Authors Engelbrecht, J.A.A., Deyzel, G., Minnaar, E.G., Goosen, W.E., van Rooyen, I.J.
Format Journal Article
LanguageEnglish
Published United States Elsevier B.V 15.04.2014
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Summary:3C-SiC wafers were irradiated with neutrons of various fluences and at low (200–400°C) irradiation temperatures. Fourier transform infrared (FTIR) reflectance spectra were obtained for the samples, and the spectra used to extract the dielectric parameters for each specimen, using statistical curve-fitting procedures. Analysis of all data revealed trends in reflectance peak heights as well as in the dielectric parameters. The surface roughness of the irradiated samples was measured by atomic force spectroscopy (AFM) and certain trends could be ascribed to surface roughness.
Bibliography:ObjectType-Article-2
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DE-AC07-05ID14517
DOE - NE
INL/JOU-13-29473
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2013.10.059