Fabrication of OMT-Coupled Kinetic Inductance Detector for CMB Detection

• Published in: Journal of low temperature physics Vol. 199; no. 1-2; pp. 362 - 368
• Main Authors: Tang, Q. Y., Barry, P. S., Cecil, T. W., Shirokoff, E.
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.04.2020; Springer Nature B.V; Springer
• Subjects: Aluminum; Arrays; Big Bang theory; Characterization and Evaluation of Materials; Condensed Matter Physics; Cosmic microwave background; Cosmology; Detectors; fabrication; Frequencies; Inductance; kinetic inductance detector; Low temperature physics; Magnetic Materials; Magnetism; Microstrip transmission lines; Multiplexing; Niobium; Noise sensitivity; OTHER INSTRUMENTATION; Physics; Physics and Astronomy; Prototypes; Sensors; Silicon; Substrates; Fabrication; Kinetic inductance detector; Cosmic microwave background
• ISSN: 0022-2291; 1573-7357
• DOI: 10.1007/s10909-020-02341-5

Future cosmic microwave background (CMB) experiments, including the large scale ground-based Stage Four CMB Experiment (CMB-S4), satellites, and balloons, aim to map the CMB to an unprecedented precision in order to answer several key questions in cosmology. However, to reach the target noise sensitivity, more than 100,000 detectors will be needed. Arrays of kinetic inductance detectors (KIDs) are a promising alternative for experiments that require large number of detectors due to the intrinsic multiplexing capabilities. We present the fabrication procedure for a prototype planar orthomode transducer (OMT)-coupled multi-color KID array optimized for 220/270 GHz frequency bands. These devices are made from silicon-on-insulator wafers to provide a low-loss substrate for the KIDs. The OMT couples the two polarizations of light from a wide-band feedhorn to separate Nb/SiN/Nb microstrip lines, which are then coupled to Al/Nb lumped-element KIDs (LEKIDs). The silicon on the backside of the OMT is etched away using deep reactive ion etch to release the OMT membrane to enable operation over a wide bandwidth. Finally, the buried oxide is removed underneath the KID capacitors in order to minimize two-level system noise and loss mitigation. We achieved a good yield (> 80%) on our prototype devices.