Memory Behaviors Based on ITO/Graphene Oxide/Al Structure

We investigate the memory properties of the ITO/graphene oxide/Al diodes. It is found that the devices show different memory behaviors with the diverse geometry and thickness of Al. When the thickness of the Al electrode is relatively thick, the device of the cross-point Al electrode shows a three-l...

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Bibliographic Details
Published inChinese physics letters Vol. 32; no. 7; pp. 138 - 141
Main Author 仪明东 郭佳林 胡波 夏先海 范曲立 解令海 黄维
Format Journal Article
LanguageEnglish
Published 01.07.2015
Subjects
Devices
Diodes
Electrodes
Graphene
ITO
Memory devices
Oxides
Solvents
Static random access memory
几何形状
氧化石墨
行为
记忆效应
铝电极
铝结构
随机存取
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Summary:We investigate the memory properties of the ITO/graphene oxide/Al diodes. It is found that the devices show different memory behaviors with the diverse geometry and thickness of Al. When the thickness of the Al electrode is relatively thick, the device of the cross-point Al electrode shows a three-level memory effect, and the counterpart device of the cross-bar Al electrode exhibits a volatile static random access memory effect. When the thickness of the AI electrode is thinner, the above devices demonstrate a flash memory effect. The different memory behaviors of ITO/GO/AI diodes are ascribed to the mode and degree of reduction and oxidation of GO.
Bibliography:11-1959/O4
YI Ming-Dong, GUO Jia-Lin, HU Bo, XIA Xian-Hai, FAN Qu-Li , XIE Ling-Hai, HUANG Wei（ 1 Key Laboratory for Organic Electronics and Information Displays ＆ Institute of Advanced Materials, diangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts ＆ Telecommunications, Nanjing 210023 2Key Laboratory of Flexible Electronics ＆ Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing 211816）
We investigate the memory properties of the ITO/graphene oxide/Al diodes. It is found that the devices show different memory behaviors with the diverse geometry and thickness of Al. When the thickness of the Al electrode is relatively thick, the device of the cross-point Al electrode shows a three-level memory effect, and the counterpart device of the cross-bar Al electrode exhibits a volatile static random access memory effect. When the thickness of the AI electrode is thinner, the above devices demonstrate a flash memory effect. The different memory behaviors of ITO/GO/AI diodes are ascribed to the mode and degree of reduction and oxidation of GO.
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/32/7/077201