The role of randomly distributed well widths in disordered GaAs/AlGaAs superlattices

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Bibliographic Details
Published inSemiconductor science and technology Vol. 11; no. 3; pp. 308 - 314
Main Authors Lorusso, G F, Capozzi, V, Staehli, J L, Flesia, C, Martin, D, Favia, P, Perna, G
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.03.1996
Institute of Physics
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electrical properties of specific thin films
Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Iii-v semiconductors
Physics
Aluminium arsenides
Temperature dependence
Disordered systems
Gallium arsenides
Inorganic compounds
Semiconductor materials
Ternary compounds
Photoluminescence
Theoretical study
Binary compounds
Fine structure
Superlattices
Absorption spectra
Energy-level density
Miniband
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/11/3/007