Discrimination Voltage and Overdrive Bias Dependent Performance Evaluation of Passively Quenched SiC Single-Photon-Counting Avalanche Photodiodes

• Published in: Chinese physics letters Vol. 32; no. 8; pp. 196 - 199
• Main Author: 刘飞 杨森 周东 陆海 张荣 郑有炓
• Format: Journal Article
• Language: English
• Published: 01.08.2015
• Subjects: 4H-SiC; Avalanches; Counting; Discrimination; Electric potential; Photodiodes; Photons; Quenching; Voltage; 偏压; 单光子; 绩效评价; 调质; 超速; 雪崩光电二极管; 驱动电压
• ISSN: 0256-307X; 1741-3540
• DOI: 10.1088/0256-307X/32/8/088503

In many critical civil and emerging military applications, low-level UV detection, sometimes at single photon level, is highly desired. In this work, a mesa-type 4H-SiC UV avalanche photodiode （APD） is designed and fabricated, which exhibits low leakage current and high avalanche gain. When studied...