Discrimination Voltage and Overdrive Bias Dependent Performance Evaluation of Passively Quenched SiC Single-Photon-Counting Avalanche Photodiodes

In many critical civil and emerging military applications, low-level UV detection, sometimes at single photon level, is highly desired. In this work, a mesa-type 4H-SiC UV avalanche photodiode （APD） is designed and fabricated, which exhibits low leakage current and high avalanche gain. When studied...

Full description

Saved in:
Bibliographic Details
Published inChinese physics letters Vol. 32; no. 8; pp. 196 - 199
Main Author 刘飞 杨森 周东 陆海 张荣 郑有炓
Format Journal Article
LanguageEnglish
Published 01.08.2015
Subjects
4H-SiC
Avalanches
Counting
Discrimination
Electric potential
Photodiodes
Photons
Quenching
Voltage
偏压
单光子
绩效评价
调质
超速
雪崩光电二极管
驱动电压
Online AccessGet full text

Cover

More Information
Summary:In many critical civil and emerging military applications, low-level UV detection, sometimes at single photon level, is highly desired. In this work, a mesa-type 4H-SiC UV avalanche photodiode （APD） is designed and fabricated, which exhibits low leakage current and high avalanche gain. When studied by using a passive quenching circuit, the APD exhibits self-quenching characteristics due to its high differential resistance in the avalanche region. The single photon detection efficiency and dark count rate of the APD are evaluated as functions of discrimination voltage and over-drive voltage. The optimized operation conditions of the single photon counting APD are discussed.
Bibliography:In many critical civil and emerging military applications, low-level UV detection, sometimes at single photon level, is highly desired. In this work, a mesa-type 4H-SiC UV avalanche photodiode （APD） is designed and fabricated, which exhibits low leakage current and high avalanche gain. When studied by using a passive quenching circuit, the APD exhibits self-quenching characteristics due to its high differential resistance in the avalanche region. The single photon detection efficiency and dark count rate of the APD are evaluated as functions of discrimination voltage and over-drive voltage. The optimized operation conditions of the single photon counting APD are discussed.
11-1959/O4
LIU Fei, YANG Sen, ZHOU Dong, LU ZHANG Rong, ZHENG You-Dou（ 1 jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 2 Collaborative Innovation Center of Advanced Microstructures Nanjing 210093）
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/32/8/088503