Improvements of MCT MBE Growth on GaAs

• Published in: Journal of electronic materials Vol. 43; no. 8; pp. 2935 - 2940
• Main Authors: Ziegler, J., Wenisch, J., Breiter, R., Eich, D., Figgemeier, H., Fries, P., Lutz, H., Wollrab, R.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Boston Springer US 01.08.2014; Springer; Springer Nature B.V
• Subjects: Applied sciences; Characterization and Evaluation of Materials; Chemistry and Materials Science; Cross-disciplinary physics: materials science; rheology; Electronics; Electronics and Microelectronics; Exact sciences and technology; Infrared imaging systems; Instrumentation; Materials Science; Methods of crystal growth; physics of crystal growth; Methods of deposition of films and coatings; film growth and epitaxy; Methods of nanofabrication; Molecular, atomic, ion, and chemical beam epitaxy; Optical and Electronic Materials; Optoelectronic devices; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Solid State Physics; Substrates; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation; Infrared detectors; GaAs substrates; MBE; HgCdTe; IR-FPA; MCT; Focal plane arrays; Photodetectors; Inclusions; Diodes; II-VI semiconductors; Growth mechanism; Molecular beam epitaxy; IV characteristic; Nanomaterial synthesis
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-014-3149-7

In recent years, continuous progress has been published in the development of HgCdTe (MCT) infrared (IR) focal plane arrays (FPAs) fabricated by molecular beam epitaxy on GaAs substrates. In this publication, further characterization of the state-of-the art 1280 × 1024 pixel, 15- μ m pitch detector fabricated from this material in both the mid-wavelength (MWIR) and long-wavelength (LWIR) IR region will be presented. For MWIR FPAs, the percentage of defective pixel remains below 0.5% up to an operating temperature ( T OP ) of around 100 K. For the LWIR FPA, an operability of 99.25% was achieved for a T OP of 76 K. Additionally, the beneficial effect of the inclusion of MCT layers with a graded composition region was investigated and demonstrated on current–voltage ( IV ) characteristics on test diodes in a MWIR FPA.