Resistive Switching Properties of Sol–Gel-Derived V-Doped SrTiO3 Thin Films

• Published in: Journal of electronic materials Vol. 42; no. 8; pp. 2510 - 2515
• Main Authors: Tang, Zhen Hua, Xiong, Ying, Xu, Ding Lin, Tang, Ming Hua, Wang, Zi Ping, Xiao, Yong Guang, Zeng, Bo Wen, Gu, Xiao Chen, Li, Jian Cheng, Wang, Long Hai
• Format: Journal Article
• Language: English
• Published: Boston Springer US 01.08.2013; Springer; Springer Nature B.V
• Subjects: Characterization and Evaluation of Materials; Chemical synthesis; Chemistry and Materials Science; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Electrical properties of specific thin films; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronics and Microelectronics; Exact sciences and technology; Hydrogels; Instrumentation; Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids); Materials Science; Methods of deposition of films and coatings; film growth and epitaxy; Optical and Electronic Materials; Physics; Solid State Physics; Switching; Thin films; RRAM; Nonvolatile memory; resistive switching; V-doped SrTiO; thin films; Doping; Space charge; Switching; MIM structures; Thin films; Irreversible processes; Non volatile memory; IV characteristic; Sol-gel process
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-013-2600-5

V-doped and undoped SrTiO 3 (V:STO and STO) thin films on Pt/Ti/SiO 2 /Si substrates were synthesized using a sol–gel method to form metal–insulator–metal (MIM) structures. Coexistence of the bipolar and unipolar resistive switching (BRS and URS) modes in Pt/STO/Pt and Pt/V:STO/Pt structures was observed as a irreversible transition from BRS to URS on adjustment of the compliance current ( I comp ). Both states were stable and reproducible over 60 cycles, and the maximum operating voltage of the Pt/STO/Pt was reduced from 10 V to 2 V by doping with V. Linear fitting of current–voltage curves suggests that space-charge-limited leakage was the limiting leakage mechanism for these two devices. Based on these results, a switching mechanism based on filament theory is proposed to explain both resistive switching modes.