High Temperature Thermoelectric Device Concept Using Large Area PN Junctions

• Published in: Journal of electronic materials Vol. 43; no. 6; pp. 2376 - 2383
• Main Authors: Chavez, R., Angst, S., Hall, J., Stoetzel, J., Kessler, V., Bitzer, L., Maculewicz, F., Benson, N., Wiggers, H., Wolf, D., Schierning, G., Schmechel, R.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Boston Springer US 01.06.2014; Springer; Springer Nature B.V
• Subjects: Applied sciences; Characterization and Evaluation of Materials; Chemistry and Materials Science; Cross-disciplinary physics: materials science; rheology; Electrical engineering; Electricity generation; Electronics; Electronics and Microelectronics; Exact sciences and technology; Generators; High temperature; Instrumentation; Materials Science; Nanoscale materials and structures: fabrication and characterization; Nanostructured materials; Optical and Electronic Materials; Other topics in nanoscale materials and structures; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Solid State Physics; Thermoelectric, pyroelectric devices, etc; nanostructured silicon; thermoelectricity; Thermoelectric generators; junctions; Electrical conductivity; Output power; Nanoparticle; Doping; p n junction; High temperature; Thermoelectric device; Thermoelectric power; p type semiconductor; Thermal conductivity; Silicon; Peltier effect; Temperature distribution; Electronic properties; Electric contact; Seebeck effect; Nanostructure; Thermoelectric generator; PN junctions; Thermoelectricity; Temperature gradient; Electronic structure; Electric field effect; Nanostructured materials; Interface

A new high temperature thermoelectric device concept using large area nanostructured silicon p -type and n -type ( PN ) junctions is presented. In contrast to conventional thermoelectric generators, where the n -type and p -type semiconductors are connected electrically in series and thermally in pa...