High Temperature Thermoelectric Device Concept Using Large Area PN Junctions

• Published in: Journal of electronic materials Vol. 43; no. 6; pp. 2376 - 2383
• Main Authors: Chavez, R., Angst, S., Hall, J., Stoetzel, J., Kessler, V., Bitzer, L., Maculewicz, F., Benson, N., Wiggers, H., Wolf, D., Schierning, G., Schmechel, R.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Boston Springer US 01.06.2014; Springer; Springer Nature B.V
• Subjects: Applied sciences; Characterization and Evaluation of Materials; Chemistry and Materials Science; Cross-disciplinary physics: materials science; rheology; Electrical engineering; Electricity generation; Electronics; Electronics and Microelectronics; Exact sciences and technology; Generators; High temperature; Instrumentation; Materials Science; Nanoscale materials and structures: fabrication and characterization; Nanostructured materials; Optical and Electronic Materials; Other topics in nanoscale materials and structures; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Solid State Physics; Thermoelectric, pyroelectric devices, etc; nanostructured silicon; thermoelectricity; Thermoelectric generators; junctions; Electrical conductivity; Output power; Nanoparticle; Doping; p n junction; High temperature; Thermoelectric device; Thermoelectric power; p type semiconductor; Thermal conductivity; Silicon; Peltier effect; Temperature distribution; Electronic properties; Electric contact; Seebeck effect; Nanostructure; Thermoelectric generator; PN junctions; Thermoelectricity; Temperature gradient; Electronic structure; Electric field effect; Nanostructured materials; Interface
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-014-3073-x

A new high temperature thermoelectric device concept using large area nanostructured silicon p -type and n -type ( PN ) junctions is presented. In contrast to conventional thermoelectric generators, where the n -type and p -type semiconductors are connected electrically in series and thermally in parallel, we experimentally demonstrate a device concept in which a large area PN junction made from highly doped densified silicon nanoparticles is subject to a temperature gradient parallel to the PN interface. In the proposed device concept, the electrical contacts are made at the cold side eliminating the hot side substrate and difficulties that go along with high temperature electrical contacts. This concept allows temperature gradients greater than 300 K to be experimentally applied with hot side temperatures larger than 800 K. Electronic properties of the PN junctions and power output characterizations are presented. A fundamental working principle is discussed using a particle network model with temperature and electric fields as variables, and which considers electrical conductivity and thermal conductivity according to Fourier’s law, as well as Peltier and Seebeck effects.