Total ionizing dose effect of gamma rays on H-gate PDSOI MOS devices at different dose rates

• Published in: Nuclear science and techniques Vol. 28; no. 10; pp. 51 - 57
• Main Authors: Wang, Qian-Qiong, Liu, Hong-Xia, Wang, Shu-Long, Fei, Chen-Xi, Zhao, Dong-Dong, Chen, Shu-Peng, Chen, Wei
• Format: Journal Article
• Language: English
• Published: Singapore Springer Singapore 01.10.2017; Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an 710071, China
• Subjects: Energy; Hadrons; Heavy Ions; NMOS器件; Nuclear Energy; Nuclear Physics; SOI; 低剂量率; 总剂量效应; 界面态密度; 线对; 绝缘体上硅; Mobility; Total dose irradiation; Interface states; PDSOI device
• ISSN: 1001-8042; 2210-3147
• DOI: 10.1007/s41365-017-0295-7

The total dose effect of 60Co y-rays on H-gate partially depleted-silicon-on-insulator 0.8-μm NMOS devices was investigated at different irradiation doses. The results show that the shift in saturation current at high dose rate is greater than that at low dose rate, due to increase in interface-state density with decreasing dose rate; the scattering effect of interface state on electrons in the channel causes degradation in cartier mobility; and the body current and transconductance of the back gate enhance low-dose- rate sensitivity when the irradiation is under OFF-bias. A double transconductance peak is observed at 3 kGy（Si） under high dose rates.