Comparison of Solid-State Microwave Annealing with Conventional Furnace Annealing of Ion-Implanted SiC

• Published in: Journal of electronic materials Vol. 36; no. 4; pp. 324 - 331
• Main Authors: SUNDARESAN, SIDDARTH G., RAO, MULPURI V., TIAN, YONGLAI, SCHREIFELS, JOHN A., WOOD, MARK C., JONES, KENNETH A., DAVYDOV, ALBERT V.
• Format: Journal Article
• Language: English
• Published: Warrendale Springer Nature B.V 01.04.2007
• Subjects: Annealing; Ion implantation; Microwaves; Silicon carbide
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-006-0032-1

Rapid solid-state microwave annealing was performed for the first time on Nsup+-, Alsup+- and Bsup+-implanted SiC, and the results were compared with the conventional furnace annealing. For microwave annealing, temperatures up to 2,000 degrees Celsius were attained with heating rates exceeding 600 degrees Celsius/s. An 1,850 degrees Celsius/35 s microwave anneal yielded a root-mean-square (RMS) surface roughness of 2 nm, which is lower than the 6 nm obtained for 1,500 degrees Celsius/15 min conventional furnace annealing. For the Al implants, a minimum room-temperature sheet resistance (Rsubs) of 7 kΩ/[white square] was measured upon microwave annealing. For the microwave annealing, Rutherford backscattering (RBS) measurements indicated a better structural quality, and secondary-ion-mass-spectrometry (SIMS) boron implant depth profiles showed reduced boron redistribution compared to the corresponding results of the furnace annealing.