Comparison of Solid-State Microwave Annealing with Conventional Furnace Annealing of Ion-Implanted SiC
Rapid solid-state microwave annealing was performed for the first time on Nsup+-, Alsup+- and Bsup+-implanted SiC, and the results were compared with the conventional furnace annealing. For microwave annealing, temperatures up to 2,000 degrees Celsius were attained with heating rates exceeding 600 d...
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Published in | Journal of electronic materials Vol. 36; no. 4; pp. 324 - 331 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
Warrendale
Springer Nature B.V
01.04.2007
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Subjects | |
Online Access | Get full text |
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Summary: | Rapid solid-state microwave annealing was performed for the first time on Nsup+-, Alsup+- and Bsup+-implanted SiC, and the results were compared with the conventional furnace annealing. For microwave annealing, temperatures up to 2,000 degrees Celsius were attained with heating rates exceeding 600 degrees Celsius/s. An 1,850 degrees Celsius/35 s microwave anneal yielded a root-mean-square (RMS) surface roughness of 2 nm, which is lower than the 6 nm obtained for 1,500 degrees Celsius/15 min conventional furnace annealing. For the Al implants, a minimum room-temperature sheet resistance (Rsubs) of 7 kΩ/[white square] was measured upon microwave annealing. For the microwave annealing, Rutherford backscattering (RBS) measurements indicated a better structural quality, and secondary-ion-mass-spectrometry (SIMS) boron implant depth profiles showed reduced boron redistribution compared to the corresponding results of the furnace annealing. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0361-5235 1543-186X |
DOI: | 10.1007/s11664-006-0032-1 |