Advances in Doped ZnO Nanostructures for Gas Sensor

Gas sensors based on metal oxides semiconductor (MOS) have attracted extensive attention from both academic and industry. ZnO, as a typical MOS, exhibits potential applications in toxic gas detection, owning to its wide band gap, n‐type transport characteristic and excellent electrical performance....

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Published inChemical record Vol. 20; no. 12; pp. 1553 - 1567
Main Authors Wang, Chao‐Nan, Li, Yu‐Liang, Gong, Fei‐Long, Zhang, Yong‐Hui, Fang, Shao‐Ming, Zhang, Hao‐Li
Format Journal Article
LanguageEnglish
Published Hoboken Wiley Subscription Services, Inc 01.12.2020
Subjects
band gap
Crystal structure
Depletion
depletion layer
doped ZnO
Doping
Energy gap
Gas sensors
Metal oxides
Morphology
Theoretical analysis
Transport properties
Zinc oxide
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Summary:Gas sensors based on metal oxides semiconductor (MOS) have attracted extensive attention from both academic and industry. ZnO, as a typical MOS, exhibits potential applications in toxic gas detection, owning to its wide band gap, n‐type transport characteristic and excellent electrical performance. Meanwhile, doping is an effective way to improve the sensing performance of ZnO materials. In this review, the effects of different types of doping on morphology, crystal structure, band gap and depletion layer of ZnO materials are comprehensively discussed. Theoretical analysis on the strategies for enhancing the sensing properties of ZnO is also provided. This review puts forward the reasonable insight for designing efficient n‐type ZnO‐based semiconductor oxide sensing materials. Gas sensor is still a research hotspot in academia and industry. It is necessary to prepare high‐efficiency sensing material.This review focuses on the influence of doping on the improvement of ZnO sensing performance.
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ISSN:1527-8999
1528-0691
DOI:10.1002/tcr.202000088