Band hybridization effect in InAs/GaSb based quantum wells

• Published in: Physics letters. A Vol. 377; no. 9; pp. 727 - 730
• Main Authors: Wei, X.F., Gong, Y.P., Long, M.S., Yang, C.H., Liu, L.W.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 15.03.2013
• Subjects: Band hybridization; Band theory; Dispersions; Energy gap; Exchange self-energy; Indium arsenides; Many-body effect; Mathematical analysis; Minigap; Quantum wells; Solid state physics; Type II quantum well; Type II quantum well; Exchange self-energy; Many-body effect; Minigap; Band hybridization
• ISSN: 0375-9601; 1873-2429
• DOI: 10.1016/j.physleta.2013.01.014

We develop a simple way to investigate the band hybridization effect in the present of the many-body interactions in an InAs/GaSb based quantum wells with different widths. The exchange self-energy and energy gap are obtained analytically at the long wave limit. An electron-like and a hole-like dispersion relations were obtained and a minigap about several meV is observed at the intercross of the electron and hole dispersion relations. Our theoretical results show that the widths of the quantum well have crucial role on the band hybridization in such a system. ► The band hybridization effect induced by many body interactions is investigated analytically in an InAs/GaSb based type II and broken-gap quantum well system. ► A minigap about several meV is obtained at the intercross of the electron and hole dispersion relations. ► The hybridization effect is determined by the widths of different material layers in the quantum well. ► Our analytical results can give a deeper physical understanding of the band hybridization in InAs/GaSb based type II and broken-gap QW systems.