Growth, coalescence, and electrical resistivity of thin Pt films grown by dc magnetron sputtering on SiO2

• Published in: Applied surface science Vol. 254; no. 22; pp. 7356 - 7360
• Main Authors: AGUSTSSON, J. S, ARNALDS, U. B, INGASON, A. S, GYLFASON, K. B, JOHNSEN, K, OLAFSSON, S, GUDMUNDSSON, J. T
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier 15.09.2008
• Subjects: coalescence; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Deposition by sputtering; Electrical properties of specific thin films; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; in situ resistivity; magnetron sputtering; Materials science; Metal and metallic alloys; Metals and metallic alloys; Methods of deposition of films and coatings; film growth and epitaxy; Physics; STM; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); TECHNOLOGY; TEKNIKVETENSKAP; thin film; Thin film structure and morphology; Inorganic compounds; Electrical conductivity; 81.05.Bx; In situ; Roughness; 73.61 At; 81.15.Cd; Fabrication property relation; In situ resistivity; STM; Surface structure; Thin film; Scanning tunneling microscopy; Cathode sputtering; Magnetron sputtering; Platinum; 68.37.Ef; Ultrathin films; Grain size; Temperature dependence; Film growth; Thickness; Magnetrons; Transition elements; 73.61. -r; Coalescence
• ISSN: 0169-4332; 1873-5584; 1873-5584
• DOI: 10.1016/j.apsusc.2008.05.335

Ultra thin platinum films were grown by dc magnetron sputtering on thermally oxidized Si (1 0 0) substrates. The electrical resistance of the films was monitored in situ during growth. The coalescence thickness was determined for various growth temperatures and found to increase from 1.1 nm for films grown at room temperature to 3.3 nm for films grown at 400 deg C. A continuous film was formed at a thickness of 2.9 nm at room temperature and 7.5 nm at 400 deg C. The room temperature electrical resistivity decreases with increased growth temperature, while the in-plain grain size and the surface roughness, measured with a scanning tunneling microscope (STM), increase. Furthermore, the temperature dependence of the film electrical resistance was explored at various stages during growth.