Computation of the locus crossing point location of MC circuit

In this paper, the crossing point property of the i-v hysteresis curve in a memristor-capacitor （MC） circuit is analyzed. First, the ideal passive memristor on the crossing point property of i-v hysteresis curve is studied. Based on the analysis, the analytical derivation with respect to the crossin...

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Bibliographic Details
Published inChinese physics B Vol. 23; no. 4; pp. 682 - 685
Main Author 刘海军 李智炜 步凯 孙兆林 聂洪山
Format Journal Article
LanguageEnglish
Published 01.04.2014
Subjects
Circuits
Derivation
Drift
Hysteresis
Mathematical analysis
Memory devices
Resistors
Volt-ampere characteristics
交叉点
位置
漂移特性
状态图
电容值
电路
计算
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Summary:In this paper, the crossing point property of the i-v hysteresis curve in a memristor-capacitor （MC） circuit is analyzed. First, the ideal passive memristor on the crossing point property of i-v hysteresis curve is studied. Based on the analysis, the analytical derivation with respect to the crossing point location of MC circuit is given. Then the example of MC with linear memristance-versus-charge state map is demonstrated to discuss the drift property of cross-point location, caused by the frequency and capacitance value.
Bibliography:memristor, memristive system, crossing point, pinched hysteresis loop
In this paper, the crossing point property of the i-v hysteresis curve in a memristor-capacitor （MC） circuit is analyzed. First, the ideal passive memristor on the crossing point property of i-v hysteresis curve is studied. Based on the analysis, the analytical derivation with respect to the crossing point location of MC circuit is given. Then the example of MC with linear memristance-versus-charge state map is demonstrated to discuss the drift property of cross-point location, caused by the frequency and capacitance value.
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/23/4/048401